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Title:
RESIST COATER FOR SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPH01108724
Kind Code:
A
Abstract:

PURPOSE: To dispose of the waste fluid of resist without interruption of a resist coating treatment, and to make it possible to form a resist film in uniform thickness by a method wherein a filter is provided in close vicinity of a spin check, a housing and a case are closely fixed, and a bent part where a hose will be blocked out is provided.

CONSTITUTION: The lower cup 22 is brought down, a water 3 is transferred to a spin check 2, and the wafer is vacuum-attracted to the spin check 2. At this time, a filter 24 is brought up in advance, and a nozzle 7 is moved forward. The lower cup 22 is raised, it is closely fixed to the upper cup, resist liquid is dripped on the wafer 3 from the nozzle 7, and the wafer 3 is rotated at the speed of about 1000 revolutions per minute. After maintaining the state for about five minutes, the dripping of the resist liquid is stopped, the filter 24 is lowered while the nozzle 7 is being retreated, and a resist film is formed on the wafer 3 by rotating it at the speed of about 4000W5000 revolutions per minute. Besides, a resist liquid system is shut tightly by accumulating the resist liquid at the bent part 26 of a hole 9.


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Inventors:
KADOTA MITSUGI
Application Number:
JP26716787A
Publication Date:
April 26, 1989
Filing Date:
October 21, 1987
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
B05C11/08; E03C1/284; H01L21/027; H01L21/30; (IPC1-7): B05C11/08; E03C1/284; H01L21/30
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)



 
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