To provide a resist composition for liquid immersion lithography having good lithography characteristics and hydrophobicity suitable for liquid immersion lithography, and a resist pattern forming method.
The resist composition for liquid immersion lithography comprises a base material component (A) of which the alkali solubility varies under the action of an acid and which does not have a constitutional unit (c1) represented by general formula (c1-1) [wherein R is a hydrogen atom, a lower alkyl group, a halogen atom or a lower haloalkyl group; Rf is a fluoroalkyl group; and Y0 is an alkylene group], an acid generator component (B) which generates an acid upon exposure to light, and a fluorine-containing resin component (C) having the constitutional unit (c1).
Masatake Shiga
Masakazu Aoyama
Suzuki Mitsuyoshi
Noriko Yanai
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