To solve problems in techniques for improving performance in microprocessing of semiconductor elements using actinic rays or radiation, particularly, electron beams, X-rays, KrF excimer laser beams or ArF excimer laser beams, to provide a resist composition for forming a preferable profile while reducing line end shortening and development defects, and to provide a method for forming a pattern using the composition.

The resist composition contains a nitrogen-containing compound having a group selected from fluorine-substituted alkyl groups, aryl groups and aralkyl groups and having a polar group. The method for forming a pattern using the resist composition is also provided.