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Patent Searching and Data


Title:
RESIST COMPOSITION AND METHOD FOR FORMING PATTERN USING THE SAME
Document Type and Number:
Japanese Patent JP2008241871
Kind Code:
A
Abstract:

To solve problems in techniques for improving performance in microprocessing of semiconductor elements using actinic rays or radiation, particularly, KrF excimer laser beams, electron beams, or EUV beams; to provide a positive resist composition having high sensitivity, reduced line width roughness and density distribution dependency, and particularly in EUV exposure, showing high sensitivity as well as preferable dissolution contrast; and to provide a method for forming a pattern using the composition.

The resist composition contains a resin having a specified repeating unit having an indenone structure and a repeating unit which is decomposed by an effect of an acid to increase alkali solubility, and a compound which generates an acid by irradiation with actinic rays or radiation. The method for forming a pattern is carried out by using the resist composition.


Inventors:
Makino, Masaomi
Mizutani, Kazuyoshi
Application Number:
JP2007000079148
Publication Date:
October 09, 2008
Filing Date:
March 26, 2007
Export Citation:
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Assignee:
FUJIFILM CORP
International Classes:
G03F7/039; C08F32/08; C08F212/14; C08F220/10; H01L21/027
Attorney, Agent or Firm:
高松 猛
矢澤 清純