To provide a method for forming a resist pattern, by which a negative pattern can be formed with high resolution and in a favorable shape, and to provide a resist composition suitable to be used for the method.
The method for forming a resist pattern includes the steps of: (1) forming a resist film 2 by coating a support body 1 with a resist composition containing a base component (A) that generates a base by exposure and increases the solubility with an alkali developing solution by an action of an acid; (2) exposing the resist film 2; (3) baking the resist film after the step (2); and forming a negative resist pattern by developing the resist film 2 with an alkali to dissolve and remove an unexposed portion 2b of the resist film 2. The resist composition used for the step (1) is also disclosed.
NAKAMURA TAKESHI
YOKOYA JIRO
NITO TAKEHITO
JPH07261393A | 1995-10-13 | |||
JP2011102974A | 2011-05-26 | |||
JP2012018197A | 2012-01-26 | |||
JP2012018198A | 2012-01-26 | |||
JP2012181510A | 2012-09-20 | |||
JPH07261393A | 1995-10-13 | |||
JP2011102974A | 2011-05-26 | |||
JP2012018197A | 2012-01-26 | |||
JP2012018198A | 2012-01-26 | |||
JP2012181510A | 2012-09-20 |
US20030008240A1 | 2003-01-09 | |||
US20020187436A1 | 2002-12-12 | |||
US20020160318A1 | 2002-10-31 | |||
US20020160316A1 | 2002-10-31 | |||
US20030008240A1 | 2003-01-09 | |||
US20020187436A1 | 2002-12-12 | |||
US20020160318A1 | 2002-10-31 | |||
US20020160316A1 | 2002-10-31 |
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi