To provide a resist composition excellent in lithography characteristics and storage stability, a resist pattern formation method using the resist composition, and a new compound useful as a photoreactive quencher for use in the resist composition.
There is provided a resist composition containing: a base component (A) having solubility characteristics to a developing solution that is changed by the action of an acid; a photoreactive quencher (C); and an acid generator composition (B) that generates an acid by being exposed to light, the photoreactive quencher (C) containing a compound expressed by the following general formula (c1) where R1 denotes a hydrogen atom or a 1-20C hydrocarbon radical which may have a substituent group, R2 and R3 each independently denote a hydrogen atom or a 1-20C hydrocarbon radical which may have a substituent group, and at least two or three of R1 to R3 may form a ring by bonding with each other. X denotes an oxygen atom or a sulfur atom. n is 0 or 1. Z+ denotes organic cation. [FORMULA 1]
UTSUMI YOSHIYUKI
KAWAKAMI AKINARI
NAMITO TOSHIAKI
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JP2013092590A | 2013-05-16 | |||
JPH09179303A | 1997-07-11 | |||
JPH09127700A | 1997-05-16 | |||
JP2008239918A | 2008-10-09 | |||
JP2006106354A | 2006-04-20 | |||
JP2006001144A | 2006-01-05 | |||
JP2005014603A | 2005-01-20 | |||
JP2004354954A | 2004-12-16 | |||
JP2004029111A | 2004-01-29 | |||
JP2004012898A | 2004-01-15 | |||
JP2003316005A | 2003-11-06 | |||
JP2002148790A | 2002-05-22 | |||
JP2001343742A | 2001-12-14 |
Masatake Shiga
Suzuki Mitsuyoshi
Mitsunaga Igarashi
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