Title:
レジスト組成物及びこれを用いたパターン形成方法
Document Type and Number:
Japanese Patent JP5485198
Kind Code:
B2
Abstract:
There is disclosed a resist composition, wherein the composition is used in a lithography and comprises at least: a polymer (A) that becomes a base resin whose alkaline-solubility changes by an acid, a photo acid generator (B) generating a sulfonic acid represented by the following general formula (1) by responding to a high energy beam, and a polymer additive (C) represented by the following general formula (2). There can be provided a resist composition showing not only excellent lithography properties but also a high receding contact angle, and in addition, being capable of suppressing a blob defect in both the immersion exposures using and not using a top coat; and a patterning process using the same.
Inventors:
Tomohiro Kobayashi
Yoichi Osawa
Yuji Harada
Yuki Suga
Yoichi Osawa
Yuji Harada
Yuki Suga
Application Number:
JP2011034748A
Publication Date:
May 07, 2014
Filing Date:
February 21, 2011
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/004; C08F220/22; C08F220/28; C08F220/30; C09K3/00; G03F7/039; H01L21/027
Domestic Patent References:
| JP2009080160A |
Foreign References:
| WO2009057484A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya