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Title:
レジスト組成物、レジストパターン形成方法及び化合物
Document Type and Number:
Japanese Patent JP6782540
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a resist composition, a method for forming a resist pattern, and a compound.SOLUTION: The resist composition generates an acid by exposure and exhibits changes in the solubility with a developer by an action of an acid, and comprises an acid generator component that generates an acid by exposure, and a photo-base deactivator component comprising a compound expressed by general formula (d0). The method for forming a resist pattern includes: a step of forming a resist film on a support body by using the above resist composition; a step of exposing the resist film; and a step of developing the resist film after exposure to form a resist pattern. In formula (d0), Rand Reach independently represent a linear, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms which may have a substituent, however, a substituent bonded to a carbon atom adjoining to a carbonyl group or a sulfonyl group does not have any of a group having a halogen atom, an aromatic group and a proton acceptor functional group; Mrepresents an m-valent organic cation; and m is an integer of 1 or more.SELECTED DRAWING: None

Inventors:
Masatoshi Arai
Takaaki Kaiho
Application Number:
JP2015235115A
Publication Date:
November 11, 2020
Filing Date:
December 01, 2015
Export Citation:
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Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
G03F7/004; C07C311/51; C07D213/82; C07D275/06; C07D333/54; C07D335/02; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
JP2014194534A
JP2002373712A
JP2001330947A
JP2008065296A
JP2016042160A
JP2011048289A
Foreign References:
EP1160095A1
Attorney, Agent or Firm:
Sumio Tanai
Masatake Shiga
Matsumoto
Ryu Miyamoto
Masato Iida



 
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