Title:
RESIST COMPOSITION
Document Type and Number:
Japanese Patent JP3890989
Kind Code:
B
Abstract:
PROBLEM TO BE SOLVED: To provide a resist composition which is a chemically amplifying positive resist composition suitable for excimer laser lithography using ArF, KrF or the like and which has excellent solubility even when a resin having a 3-hydroxy-1-adamantyl (meth)acrylate polymer unit or a 3,5-dihydroxy-1- adamantyl (meth)acrylate polymer unit is used.
SOLUTION: The resist composition contains a resin having a polymer unit expressed by formula (I) which itself is insoluble or hardly soluble with an alkali aqueous solution but is changed into soluble with an alkali aqueous solution by the action of an acid, a solvent containing at least one kind selected from a group consisting of propylene glycol monomethylether, 2-hydroxy methyl isobutyrate and 3-methoxy-1-butanol, and an acid generator. In formula (I), R1 represents a hydrogen atom or a methyl group and R2 represents a hydrogen atom or a hydroxyl group.
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Inventors:
Takada, Yoshiyuki
Moriuma, Hiroshi
Kuwana, Koji
Moriuma, Hiroshi
Kuwana, Koji
Application Number:
JP2002000016611
Publication Date:
December 15, 2006
Filing Date:
January 25, 2002
Export Citation:
Assignee:
SUMITOMO CHEM CO LTD
International Classes:
G03F7/039; C08F20/28; G03F7/004; G03F7/038; G03F7/039; C08F20/00; G03F7/004; G03F7/038; (IPC1-7): G03F7/039; C08F20/28