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Title:
RESIST FILM FORMING METHOD AND RESIST FILM
Document Type and Number:
Japanese Patent JP2023000383
Kind Code:
A
Abstract:
To provide: a resist film forming method employing a resist with viscosity which is high at normal temperature but decreases upon heating, where the method enables formation of a resist film whose film thickness is 300 μm or more and in-plane film thickness variation is within 10%; and a resist film formed by the resist film forming method.SOLUTION: A resist film forming method comprises: a step A of applying onto a substrate a resist whose viscosity at 23°C is 1000 mPa s to 30000 mPa s, thereby forming a film of the resist; a step B of applying heat treatment to the film of the resist disposed in a region surrounded by a restriction member to restrict efflux of the resist; and a step C of applying hot pressing, via a sheet, to the film of the resist after the heat treatment disposed in a region formed by installation of an adjustment member to adjust the thickness of the film of the resist to a desired thickness. There is also provided a resist film.SELECTED DRAWING: None

Inventors:
IKEDA KOZUE
Application Number:
JP2021101156A
Publication Date:
January 04, 2023
Filing Date:
June 17, 2021
Export Citation:
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Assignee:
FUJIFILM CORP
International Classes:
B05D3/00; B05D3/02; B05D3/12
Attorney, Agent or Firm:
Patent Attorney Corporation Taiyo International Patent Office



 
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