To provide (1) a resist material containing a polymer compound as a base resin which contains an ester compound giving a polymer compound with excellent acid decomposing property as a structural unit and which realizes the sensitivity, resolution and etching durability much exceeding a conventional resist product when the above polymer compound is compounded as a base resin into a resist material, and to provide (2) a method for forming a pattern by using the above resist material.
The polymer compound contains an ester compound expressed by general formula (1a) as a structural unit and has 1,000 to 500,000 weight average molecular weight. In formula (1a), R1 represents a hydrogen atom, a methyl group or CH2CO2R14, R2 represents a hydrogen atom, a methyl group or CO2R14, R3 represents a 1-8C alkyl group or a 6-20C aryl group which may be substituted, each of R4 to R13 represents a hydrogen atom or a 1-15C monovalent hydrocarbon group which may have a hetero atom or which may form a ring with others, or R4 to R13 may be coupled to form a double bond, and R14 represents a 1-15C alkyl group or its enantiomer.
NISHI TSUNEHIRO
KURIHARA HIDESHI
HASEGAWA KOJI
WATANABE TAKESHI
WATANABE OSAMU
NAKAJIMA MUTSUO
TAKEDA TAKANOBU
HATAKEYAMA JUN
Saori Shigematsu
Katsunari Kobayashi