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Title:
RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3783780
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide (1) a resist material containing a polymer compound as a base resin which contains an ester compound giving a polymer compound with excellent acid decomposing property as a structural unit and which realizes the sensitivity, resolution and etching durability much exceeding a conventional resist product when the above polymer compound is compounded as a base resin into a resist material, and to provide (2) a method for forming a pattern by using the above resist material. SOLUTION: The polymer compound contains an ester compound expressed by general formula (1a) as a structural unit and has 1,000 to 500,000 weight average molecular weight. In formula (1a), R1 represents a hydrogen atom, a methyl group or CH2CO2R14, R2 represents a hydrogen atom, a methyl group or CO2R14, R3 represents a 1-8C alkyl group or a 6-20C aryl group which may be substituted, each of R4 to R13 represents a hydrogen atom or a 1-15C monovalent hydrocarbon group which may have a hetero atom or which may form a ring with others, or R4 to R13 may be coupled to form a double bond, and R14 represents a 1-15C alkyl group or its enantiomer.

Inventors:
Kanou, Takeshi
Nishi, Tsunehiro
Kurihara, Hideshi
Hasegawa, Koji
Watanabe, Takeshi
Watanabe, Osamu
Nakajima, Mutsuo
Takeda, Takanobu
Hatakeyama, Jun
Application Number:
2003-168885
Publication Date:
June 07, 2006
Filing Date:
June 13, 2003
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
International Classes:
G03F7/039; C08F212/04; C08F220/18; C08F222/06; C08F232/08; H01L21/027; (IPC1-7): G03F7/039; C08F212/04; C08F220/18; C08F222/06; C08F232/08; H01L21/027
Domestic Patent References:
JP1184663A
JP11271974A
JP2004124082A
Attorney, Agent or Firm:
小島 隆司
重松 沙織
小林 克成