RESIST MATERIAL, AND PATTERN FORMATION METHOD

Title:

RESIST MATERIAL, AND PATTERN FORMATION METHOD

Document Type and Number:

Japanese Patent JP2009031767

Kind Code:

A

Abstract:

To provide a resist material excelling in rectangularity mask fidelity of a pattern.

This resist material is characterized by containing a polymer compound formed into a base resin having alkaline solubility changed by acid, and a polymer compound prepared by copolymerizing a repeating unit having an amino group as a macromolecular additive with a repeating unit having at least one fluorine atom. A photoresist film formed by using the photoresist material can prevent occurrence of a blob defect on the resist film by making the resist film surface hydrophilic. Degradation of the pattern shape can be prevented by preventing mixing with a resist protective film for liquid immersion exposure.

Inventors:

KOBAYASHI TOMOHIRO
HATAKEYAMA JUN
HARADA YUJI

Application Number:

JP2008159085A

Publication Date:

February 12, 2009

Filing Date:

June 18, 2008

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