Title:
RESIST MATERIAL, AND PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP2009031767
Kind Code:
A
Abstract:
To provide a resist material excelling in rectangularity mask fidelity of a pattern.
This resist material is characterized by containing a polymer compound formed into a base resin having alkaline solubility changed by acid, and a polymer compound prepared by copolymerizing a repeating unit having an amino group as a macromolecular additive with a repeating unit having at least one fluorine atom. A photoresist film formed by using the photoresist material can prevent occurrence of a blob defect on the resist film by making the resist film surface hydrophilic. Degradation of the pattern shape can be prevented by preventing mixing with a resist protective film for liquid immersion exposure.
Inventors:
KOBAYASHI TOMOHIRO
HATAKEYAMA JUN
HARADA YUJI
HATAKEYAMA JUN
HARADA YUJI
Application Number:
JP2008159085A
Publication Date:
February 12, 2009
Filing Date:
June 18, 2008
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/004; C08F216/14; C08F220/34; C08F220/60; C08F226/00; G03F7/038; G03F7/039; G03F7/38; H01L21/027
Domestic Patent References:
JP2006276657A | 2006-10-12 | |||
JP2007025634A | 2007-02-01 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
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