Title:
RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2002244297
Kind Code:
A
Abstract:
To provide a resist material excellent in stability when allowed to stand in vacuum after exposure with electron beams, hardly causing trail on a Cr substrate and excellent in sensitivity, resolution and plasma etching resistance.
The resist material contains a polymer having repeating units of formula (1) (where (m) is an integer of 0-5) and repeating units having a group obtained by substituting an acid labile group for the hydrogen atom of the hydroxyl group of a carboxyl group.
Inventors:
HATAKEYAMA JUN
TAKEDA TAKANOBU
WATANABE OSAMU
TAKEDA TAKANOBU
WATANABE OSAMU
Application Number:
JP2001044528A
Publication Date:
August 30, 2002
Filing Date:
February 21, 2001
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/039; C08F232/08; G03F7/004; G03F7/38; H01L21/027; (IPC1-7): G03F7/039; C08F232/08; G03F7/004; G03F7/38; H01L21/027
Attorney, Agent or Firm:
Takashi Kojima (1 person outside)