RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

Japanese Patent JP2015075500

A

PROBLEM TO BE SOLVED: To provide a resist material showing characteristics of excellent resolution and good edge roughness, which can be prepared into a positive resist material suitable as a micropattern forming material for fabrication of a VLSI or for a photomask and as a pattern forming material for EB or EUV exposure.SOLUTION: The resist material comprises a metal compound obtained by allowing a dihydric or trihydric alcohol expressed by general formula (A-2):R(OH)to react with at least one compound selected from a metal compound expressed by general formula (A-1):M(OR)and a metal compound obtained by (partially) hydrolyzing or condensing the above metal compound or (partially) hydrolyzing and condensing the metal compound. In general formula (A-1), M represents Ti, Zr, or Hf; and Rrepresents an alkyl group. In general formula (A-2), m is 2 or 3 and when m is 2, Rrepresents a divalent group; and when m is 3, Rrepresents a trivalent group.

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HATAKEYAMA JUN
KATAYAMA KAZUHIRO
TACHIBANA SEIICHIRO

JP2013209487A

April 20, 2015

October 04, 2013

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SHINETSU CHEMICAL CO

G03F7/004; C08G79/00; G03F7/32; H01L21/027

JP2000247640A	2000-09-12
JP2011253185A	2011-12-15
JP2001092126A	2001-04-06
JP2014178602A	2014-09-25
JP2014199429A	2014-10-23
JP2010085893A	2010-04-15
JP2009126940A	2009-06-11

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki

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