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Title:
RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3812622
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a resist material sensitive to ArF excimer laser light, excellent in sensitivity and resolution, advantageous also to etching because a thick film is formed and capable of easily forming a fine pattern perpendicular to the substrate.
SOLUTION: This resist material for ArF excimer laser light contains a base resin, a sulfonium salt of the formula as an acid generating agent and a solvent. In the formula, R1 is hydroxyl, nitro or a 1-15C linear, branched or cyclic monovalent hydrocarbon group which may contain O, N or S, two symbols R1 may form a ring, in this case, each R1 is a 1-15C linear, branched or cyclic monovalent hydrocarbon group which may contain O, N or S, K is a non-nucleophilic counter ion, (x) is 1 or 2 and (y) is an integer of 0-3.


Inventors:
Tsunehiro Nishi
Yoichi Osawa
Jun Hatakeyama
Application Number:
JP26325799A
Publication Date:
August 23, 2006
Filing Date:
September 17, 1999
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/004; H01L21/027; C08L33/04; C08L35/00; C08L45/00; C08L101/00; G03F7/039; (IPC1-7): G03F7/004; C08L33/04; C08L35/00; C08L45/00; C08L101/16; G03F7/039; H01L21/027
Domestic Patent References:
JP11194496A
JP10282671A
JP11119434A
JP10254140A
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa



 
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