Title:
RESIST MATERIAL AND PATTERNING METHOD
Document Type and Number:
Japanese Patent JP2018136527
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a resist material that has high dissolution contrast as either a positive resist material or a negative resist material, and can reduce the LWR, and a patterning method using the same.SOLUTION: A resist material contains a base polymer, and a quencher containing an iodonium salt represented by formula (A).SELECTED DRAWING: None
Inventors:
HATAKEYAMA JUN
OHASHI MASAKI
OHASHI MASAKI
Application Number:
JP2018009304A
Publication Date:
August 30, 2018
Filing Date:
January 24, 2018
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C07C25/02; G03F7/004; C07C25/13; C07C229/60; C07D295/155; C07D307/00; C07D327/08; C07D333/46; C07D333/76; C07D335/12; C07D339/08; C07J9/00; C08F20/12; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| JP2019168475A | 2019-10-03 | |||
| JP2004077983A | 2004-03-11 |
Attorney, Agent or Firm:
Hideaki International Patent Office