RESIST MATERIAL - SHINETSU CHEMICAL CO

Title:

RESIST MATERIAL

Document Type and Number:

Japanese Patent JP2002107934

Kind Code:

A

Abstract:

To provide a resist material excellent in resolving power and dry etching resistance in exposure with EB(electron beam), EUV(extreme-ultraviolet radiation) or X-rays.

The resist material contains a polymer having repeating units each containing an anthracene ring having one or more hydroxy group represented by formula (1) (where R1 is H, a 1-20C linear, branched or cyclic alkyl or a 6-20C aryl and (a) is an integer of 1-5) and repeating units each having a group obtained by substituting an acid-labile group for the hydrogen atom of the hydroxyl group of a carboxyl group. Since the resist material is excellent in stability when allowed to stand in vacuum after exposure with electron beams, cause slight trailing on a Cr substrate and is excellent in sensitivity, resolution and plasma etching resistance, it is suitable for use as a fine pattern forming material particularly in mask substrate working.

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Inventors:

HATAKEYAMA JUN
WATANABE OSAMU
TAKEDA TAKANOBU

Application Number:

JP2000293878A

Publication Date:

April 10, 2002

Filing Date:

September 27, 2000

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO

International Classes:

G03F7/039; C08F212/32; C08F220/10; C08F222/10; C08F222/40; C08F232/00; C08K5/00; C08L101/12; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F212/32; C08F220/10; C08F222/10; C08F222/40; C08F232/00; C08K5/00; C08L101/12; H01L21/027

Domestic Patent References:

JP2000098612A	2000-04-07
JPH1184663A	1999-03-26
JPH08146607A	1996-06-07
JPH09166868A	1997-06-24
JPH07181687A	1995-07-21
JP2002169295A	2002-06-14
JPH10186647A	1998-07-14

Attorney, Agent or Firm:

Takashi Kojima (2 outside)

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