To provide a resist material excellent in resolving power and dry etching resistance in exposure with EB(electron beam), EUV(extreme-ultraviolet radiation) or X-rays.
The resist material contains a polymer having repeating units each containing an anthracene ring having one or more hydroxy group represented by formula (1) (where R1 is H, a 1-20C linear, branched or cyclic alkyl or a 6-20C aryl and (a) is an integer of 1-5) and repeating units each having a group obtained by substituting an acid-labile group for the hydrogen atom of the hydroxyl group of a carboxyl group. Since the resist material is excellent in stability when allowed to stand in vacuum after exposure with electron beams, cause slight trailing on a Cr substrate and is excellent in sensitivity, resolution and plasma etching resistance, it is suitable for use as a fine pattern forming material particularly in mask substrate working.
WATANABE OSAMU
TAKEDA TAKANOBU
JP2000098612A | 2000-04-07 | |||
JPH1184663A | 1999-03-26 | |||
JPH08146607A | 1996-06-07 | |||
JPH09166868A | 1997-06-24 | |||
JPH07181687A | 1995-07-21 | |||
JP2002169295A | 2002-06-14 | |||
JPH10186647A | 1998-07-14 |
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