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Title:
RESIST MATERIAL
Document Type and Number:
Japanese Patent JP3712048
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a resist material excellent in resolving power and dry etching resistance in exposure with EB(electron beam), EUV(extreme-ultraviolet radiation) or X-rays.
SOLUTION: The resist material contains a polymer having repeating units each containing an anthracene ring having one or more hydroxy group represented by formula (1) (where R1 is H, a 1-20C linear, branched or cyclic alkyl or a 6-20C aryl and (a) is an integer of 1-5) and repeating units each having a group obtained by substituting an acid-labile group for the hydrogen atom of the hydroxyl group of a carboxyl group. Since the resist material is excellent in stability when allowed to stand in vacuum after exposure with electron beams, cause slight trailing on a Cr substrate and is excellent in sensitivity, resolution and plasma etching resistance, it is suitable for use as a fine pattern forming material particularly in mask substrate working.


Inventors:
Hatakeyama, Jun
Watanabe, Osamu
Takeda, Takanobu
Application Number:
JP2000000293878
Publication Date:
November 02, 2005
Filing Date:
September 27, 2000
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
International Classes:
G03F7/039; C08F212/32; C08F220/10; C08F222/10; C08F222/40; C08F232/00; C08K5/00; C08L101/12; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F212/32; C08F220/10; C08F222/10; C08F222/40; C08F232/00; C08L101/12; G03F7/004; H01L21/027
Domestic Patent References:
JP2000098612A
JP11084663A
JP8146607A
JP9166868A
JP7181687A
JP2002169295A
JP10186647A
Attorney, Agent or Firm:
小島 隆司
西川 裕子
流 良広