RESIST MATERIAL

Japanese Patent JP3829913

B2

PROBLEM TO BE SOLVED: To provide a resist material excellent in resolving power and dry etching resistance in exposure with EB(electron beam), EUV(extreme-ultraviolet radiation) or X-rays. SOLUTION: The resist material contains a polymer having repeating units each containing a naphthalene ring having one or more hydroxy groups represented by formula (1) ( where R1 is H, a 1-20C linear, branched or cyclic alkyl or a 6-20C aryl and (a) is an integer of 1-5) and repeating units each having a group obtained by substituting an acid-labile group for the hydrogen atom of the hydroxyl group of a carboxyl group. Since the resist material is excellent in stability when allowed to stand in vacuum after exposure with electron beams, causes slight trailing on a Cr substrate and is excellent in sensitivity, resolution and plasma etching resistance, it is suitable for use as a fine pattern forming material particularly in mask substrate working.