To provide a resist pattern forming method by which control of the dimensions of a resist pattern can be accurately performed and LER can be diminished.
The resist pattern forming method includes the steps of applying a radiation to predetermined positions of a radiation sensitive resin composition on a substrate with the radiation sensitive resin composition containing a siloxane resin having a structural unit represented by formula (I) and a weight average molecular weight, in terms of polystyrene, by GPC of 500-1,000,000 and a radiation sensitive acid generator; developing the composition with an alkaline developer; applying a radiation; and carrying out heating. In the formula (I), R denotes a 1-20C linear or branched hydrocarbon group whose valence is n+1 or a 3-20C alicyclic hydrocarbon group whose valence is n+1, the linear or branched hydrocarbon group and the alicyclic hydrocarbon group each may be substituted; X denotes a group containing an acid-dissociable group; and n is 1 or 2.
SHIMOKAWA TSUTOMU
EGAWA HIROMI
Koji Kikawa
Takeshi Higuchi