Title:
RESIST AND PATTERN FORMING METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP09050127
Kind Code:
A
Abstract:
To obtain a resist capable of forming a resist film having satisfactory rigidity, capable of suppressing the falling and breaking of a formed pattern and capable of, therefore, forming a superfine pattern having a high aspect ratio with high sensitivity.
This resist contains a sulfonyl compd. represented by the formula, a compd. having a substituent which is decomposed by an acid to form an alkali-soluble group and an alkali-soluble compd. In the formula, R1 is H, halogen, nitro, cyano, nitrile or a monovalent org. group, R2 is a halogen, nitro, cyano, nitrile or a monovalent org. group, R3 is a divalent org. group and (n) is an integer of ≥2.
Inventors:
Kihara, Naoko
Saito, Satoshi
Wakabayashi, Hiromitsu
Nakase, Makoto
Oba, Masayuki
Saito, Satoshi
Wakabayashi, Hiromitsu
Nakase, Makoto
Oba, Masayuki
Application Number:
JP1996000055027
Publication Date:
February 18, 1997
Filing Date:
March 12, 1996
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G03F7/004; G03F7/039; H01L21/027; G03F7/004; G03F7/039; H01L21/02; (IPC1-7): G03F7/039; G03F7/004; H01L21/027
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