PURPOSE: To enable development immediately after exposure without carrying out a stage for removing a CEL film and to increase the stability when a resist pattern is formed, by using a photosensitive layer contg. a specified compd.

CONSTITUTION: A resist layer is selectively exposed through a photosensitive layer for increasing the contrast of light incident on the resist layer, and the resist layer is developed together with the photosensitive layer to form a resist pattern. At this time, a photosensitive layer contg. 7,8,13,14-tetrahydroabietic acid or hydrogenated rosin contg. the acid as the principal component by ≥50% is used. Since 7,8,13,14-tetrahydroabietic acid selected as a CEL film forming material among nonpolar org. materials and materials soluble in an aq. alkali soln. is dissolved in an ordinary developer for a positive type resist, the photosensitive layer is removed during development. Rosin increases its stability by hydrogenation and the stability as a soln. in a nonpolar solvent is increased.