PURPOSE: To obtain a resist pattern high in precision by eliminating an effect of exposure fog due to scattered electrons at the time of electron beam exposure in the manufacture process of a reticle method.

CONSTITUTION: An about 1000 thick chromium film is attached to the surface of a quartz glass plate to form a substrate 1, a positive type electron beam resist film 11 made of polymethyl methacrylate of about 5000 thickness, exposed to electron beams with an acceleration voltage of 20kV, the surface layer of the film 11 is removed by the plasma ashing method with a mixture of O2 and Cl2, and the film 11 is developed to form a resist pattern 12, or it is formed by forming a negative type electron beam resist film, such as a 5000 thick chloromethylated polystyrene on the substrate 1, exposing it to electron beams, further exposing it to ultraviolet rays, and developing the negative resist film.