To obtain a resist pattern scaledown material capable of forming a resist pattern which is finer than the limit determined by the wavelength of light for exposure, a method for producing a semiconductor device using the material and a semiconductor device produced by the method.
An organic film is formed on a negative type resist pattern using the resist pattern scaledown material comprising a resin, a base generating agent and a solvent and a base component is diffused from the organic film into the resist pattern by heat treatment or irradiation with light to form a solubilized layer on the surface of the resist pattern. This solubilized layer and the organic film are removed with a removing solution to form a resist pattern which is finer than the limit determined by the wavelength of light for exposure.
TOYOSHIMA TOSHIYUKI
ISHIBASHI TAKEO
