Title:
レジスト処理方法
Document Type and Number:
Japanese Patent JP5036695
Kind Code:
B2
Abstract:
The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
Inventors:
Mitsuhiro Hata
Takayuki Yoshida
Norifumi Yamaguchi
Kazuki Takemoto
Takayuki Yoshida
Norifumi Yamaguchi
Kazuki Takemoto
Application Number:
JP2008326434A
Publication Date:
September 26, 2012
Filing Date:
December 22, 2008
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
G03F7/40; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
| JP2004004669A | ||||
| JP2001188341A | ||||
| JP2006257078A | ||||
| JP5136033A | ||||
| JP2005197349A |
Attorney, Agent or Firm:
Shinki Global IP Patent Corporation