RESIST REMOVING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURED USING SAME

Title:

RESIST REMOVING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURED USING SAME

Document Type and Number:

Japanese Patent JP2005268312

Kind Code:

A

Abstract:

To prevent increase of a specific dielectric constant of a low-dielectric-constant insulating film and to enable resist removal which leaves no resist residue.

A resist mask 6 is used as an etching mask to subject a protective insulating film 5, an MSQ film 4, and a silicon oxide film 3 constituting an inter-layer insulating film 8 on the surface of a substrate to be processed to dry etching by reactive ion etching (RIE), thereby forming a via hole 9 which reaches a diffusion layer 2 on a surface of a silicon substrate 1. The resist mask 6 is removed by removing a degerative layer 6a formed on the surface of the photoresist 6 by subjecting it to dry etching with plasma gas 10 produced by exciting NH3 gas with plasma, and then etching away the remaining resist mask 6 by irradiating it with hydrogen radical 11.

Inventors:

MATSUSHITA ATSUSHI
MATSUMOTO ISAO
INUKAI KAZUAKI
SHIN HONJE
OHASHI TADASHI
SONE SHUJI
MISAWA KAORI

Application Number:

JP2004074868A

Publication Date:

September 29, 2005

Filing Date:

March 16, 2004

Export Citation:

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Assignee:

SEMICONDUCTOR LEADING EDGE TEC

International Classes:

H01L21/3065; G03F7/42; H01L21/311; H01L21/3213; H01L21/461; H01L21/4763; H01L21/768; H01L21/027; (IPC1-7): H01L21/3065; H01L21/3213

Attorney, Agent or Firm:

Mitsuyuki Matsuyama
Masahiko Hinataji

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