Title:
RESIST UNDERLAY FILM MATERIAL, PATTERN FORMATION METHOD, AND RESIST UNDERLAY FILM FORMATION METHOD
Document Type and Number:
Japanese Patent JP2023077221
Kind Code:
A
Abstract:
To provide: a resist underlay film material having good dry etching resistance, heat resistant characteristics at 500°C or higher, and a high degree of embedding/flattening characteristics; and a resist underlay film formation method and a pattern formation method using the material.SOLUTION: Provided is a resist underlay film material comprising (A) a resin having a condensed ring compound of a specific structure having a specific aromatic substituent and (B) an organic solvent, where the Mw/Mn of the (A) compound satisfies 1.00≤Mw/Mn≤1.25.SELECTED DRAWING: None
Inventors:
KOBAYASHI NAOKI
KOORI DAISUKE
YAMAMOTO YASUYUKI
SATO HIRONORI
YANO TOSHIHARU
KOORI DAISUKE
YAMAMOTO YASUYUKI
SATO HIRONORI
YANO TOSHIHARU
Application Number:
JP2021190440A
Publication Date:
June 05, 2023
Filing Date:
November 24, 2021
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/11; C08F16/12; C08F38/00; H01L21/027
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka