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Title:
RESIST UNDERLAYER FILM MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2005250434
Kind Code:
A
Abstract:

To provide a resist underlayer film material for a multilayer resist process, particularly for a two-layer resist process, which functions as an excellent antireflection film particularly for exposure at a short wavelength, that is, has high transparency and the optimum n and k values and is excellent also in etching resistance during substrate processing.

The resist underlayer film material of a multilayer resist film used in lithography contains at least a polymer obtained by copolymerizing a repeating unit of acenaphthylene and a repeating unit having a substituted or unsubstituted hydroxy group.


Inventors:
Hatakeyama, Jun
Application Number:
JP2004000212005
Publication Date:
September 15, 2005
Filing Date:
July 20, 2004
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
International Classes:
G03F7/11; C08F232/08; G03F7/40; H01L21/027; (IPC1-7): G03F7/11; C08F232/08; G03F7/40; H01L21/027
Attorney, Agent or Firm:
好宮 幹夫



 
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