レジスト下層膜材料ならびにパターン形成方法

Title:

レジスト下層膜材料ならびにパターン形成方法

Document Type and Number:

Japanese Patent JP4069025

Kind Code:

B2

Abstract:

There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains a polymer having at least a repeating unit represented by the following general formula (1). There can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it

Inventors:

Jun Hatakeyama
Hideto Kato

Application Number:

JP2003174020A

Publication Date:

March 26, 2008

Filing Date:

June 18, 2003

Export Citation:

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