Title:
RESISTANCE CHANGE ELEMENT, MANUFACTURING METHOD THEREOF, AND STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2019165162
Kind Code:
A
Abstract:
To provide a resistance change element capable of improving the characteristics by obtaining enough resistance change for functioning as the resistance change element.SOLUTION: A resistance change element 1 comprises: a resistance change layer 2 that can occlude and release at least one type of ion, and the resistance changes according to the amount of ions; an ion conduction layer 3 which is formed so as to cover the upper surface and at least one side surface of the resistance change layer and conducts ions and does not conduct electrons; and an ion storage/release layer 4 which is formed so as to cover the upper surface and at least one side surface, and which can occlude and release ions.SELECTED DRAWING: Figure 1
Inventors:
NOSHIRO HIDEYUKI
Application Number:
JP2018053134A
Publication Date:
September 26, 2019
Filing Date:
March 20, 2018
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Yu Sanada