RESISTANCE CHANGE TYPE NONVOLATILE STORAGE

Title:

RESISTANCE CHANGE TYPE NONVOLATILE STORAGE

Document Type and Number:

Japanese Patent JP2016021272

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a resistance change type nonvolatile storage capable of stably continuing resistance change operation.SOLUTION: The resistance change type nonvolatile storage includes: a current restriction element for LR 10 connected to a first voltage source; an LR source line selection switch 14 for connecting the output of the current restriction element for LR 10 to a source line; an HR source line selection switch 18 for connecting the source line to a reference potential; an LR bit line selection switch 13 for connecting a bit line and the reference potential; and an HR bit line selection switch 16 for connecting the bit line to the second voltage source. The resistance change type nonvolatile storage includes further includes a control circuit 307 that controls the four switches 13, 14, 16 and 18 to write a low resistance state or a high resistance state on a resistance change type nonvolatile storage element and to control to apply a gate voltage to a gate of a memory cell transistor 1.SELECTED DRAWING: Figure 2

Inventors:

SHIMAKAWA KAZUHIKO
AZUMA RYOTARO
KAWAI MASARU
MURAOKA SHUNSAKU

Application Number:

JP2015115295A

Publication Date:

February 04, 2016

Filing Date:

June 05, 2015

Export Citation:

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Assignee:

PANASONIC IP MAN CORP

International Classes:

G11C13/00; H01L27/10; H01L27/105; H01L45/00; H01L49/00

Foreign References:

WO2006137111A1	2006-12-28
WO2013157261A1	2013-10-24
WO2006137111A1	2006-12-28
WO2013157261A1	2013-10-24
WO2012164926A1	2012-12-06
WO2008129774A1	2008-10-30
WO2012164926A1	2012-12-06
WO2008129774A1	2008-10-30

Attorney, Agent or Firm:

Hiromori Arai
Eisaku Teratani
Shinichi Michisaka

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