Title:
RESISTANCE CHANGE TYPE SEMICONDUCTOR MEMORY ELEMENT AND NON-VOLATILE SWITCHING DEVICE USING THE SAME, AND MANUFACTURING METHOD OF RESISTANCE CHANGE TYPE SEMICONDUCTOR MEMORY ELEMENT
Document Type and Number:
Japanese Patent JP2019145603
Kind Code:
A
Abstract:
To allow for elimination of forming process, employment of MOS structure, and non-use of expensive metal as electrode material, in resistance change type semiconductor memory element.SOLUTION: A resistance change type semiconductor memory element includes a semiconductor layer 11, an isolation layer 12 containing a metal oxide provided on the semiconductor layer 11, a seed region 13 formed between the semiconductor layer 11 and the isolation layer 12, and composed of a metal compound of a metal element composing the metal oxide and a semiconductor element composing the semiconductor layer, and an upper electrode 14 provided on the isolation layer 12, and composed of a metal. By applying a prescribed voltage between the upper electrode 14 and the semiconductor layer 11, resistance switching phenomenon, where the electrical resistance between the upper electrode 14 and the semiconductor layer 11 changes to low resistance state and high resistance state is expressed, and thereby the forming process for expressing the resistance switching phenomenon is not required.SELECTED DRAWING: Figure 1
Inventors:
HOTTA IKUJI
KAMIOKA SATOSHI
KOBAYASHI KOHEI
YOSHIDA HARUHIKO
ARAFUNE KOJI
SATO SHINICHI
KAMIOKA SATOSHI
KOBAYASHI KOHEI
YOSHIDA HARUHIKO
ARAFUNE KOJI
SATO SHINICHI
Application Number:
JP2018026649A
Publication Date:
August 29, 2019
Filing Date:
February 19, 2018
Export Citation:
Assignee:
UNIV HYOGO
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Maeda patent office