Title:
抵抗記憶素子およびその使用方法
Document Type and Number:
Japanese Patent JP5459515
Kind Code:
B2
Abstract:
A resistive memory element that includes an element body and at least a pair of electrodes opposed to each other with at least a portion of the element body interposed therebetween. The element body is made of an oxide semiconductor as a polycrystalline body, which has a composition represented by the general formula: Ti1-xMxO2, wherein M is selected from at least one of Fe, Co, Ni, and Cu; and 0.005@x@0.05. The first electrode of the pair of electrodes is made of a material which can form a Schottky barrier which can develop a rectifying property and resistance change characteristics in an interface region between the first electrode and the element body. The second electrode is made of a material which provides a more ohmic junction to the element body as compared to that with the first electrode.
Inventors:
Hirose Sakyo
Application Number:
JP2011500450A
Publication Date:
April 02, 2014
Filing Date:
September 08, 2009
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H01L27/105; G11C13/00; H01L45/00; H01L49/00
Domestic Patent References:
| JP2008310859A | 2008-12-25 | |||
| JP2007235139A | 2007-09-13 | |||
| JP2008310859A | 2008-12-25 | |||
| JP2007235139A | 2007-09-13 | |||
| JPH10135715A | 1998-05-22 | |||
| JP2007536680A | 2007-12-13 |
Foreign References:
| WO2007138646A1 | 2007-12-06 | |||
| WO2009072213A1 | 2009-06-11 |
Attorney, Agent or Firm:
Masaaki Koshiba