To provide a method for measuring resistivity of a semiconductor silicon substrate, by which resistivity can be simply measured with good reproducibility, even if the substrate has a high resistivity of more than 5000 Ω.cm and in-plane resistivity distribution can be easily measured even for a large diameter substrate.
After removing the oxide film on a surface of a substrate to be tested or reducing the thickness of the oxide film to be 0.5 nm or less, the resistivity is measured within 4 hours. After the surface of a semiconductor silicon substrate sliced from one portion of a silicon single-crystal bar is chemically etched, its resistivity is measured. If the measured value exceeds 5000 Ω.cm, the surface to be measured is chemically etched, and if the value does not exceed 5000 Ω.cm, the surface to be measured is chemically etched or grinded, and then the resistivity of the other portion of the semiconductor silicon substrate or a semiconductor silicon substrate sliced from the other portion of a silicon single crystal bar is measured. Since the optimum surface condition differs depending on the resistivity level to be measured, the resistivity can be measured precisely over the wide resistivity range with good reproducibility by using different types of surface treatment according to the resistivity level.
HAYAMIZU YOSHINORI
KIMURA MASAKI
| JP2001118902A | 2001-04-27 | |||
| JPH0737953A | 1995-02-07 | |||
| JPH07106388A | 1995-04-21 |
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