PURPOSE: To provide a resonance tunnel-type phototransistor, which is enhanced in capacity as a phototransistor and possesses functions that a conventional one has not, and an optical bistable element.
CONSTITUTION: An N-type InGaAs emitter layer 2, a P-type InGaAs base layer 3, a laminate part where InAlAs barriers 4 of a double barrier resonant tunnel element and one or more InGaAs quantum well layers are alternately laminated, an N-type InGaAs collector layer 6, and an N-type InGaAs electrode layer are successively laminated on an N-type InP substrate 1 for the formation of a resonant channel-type phototransistor. An optical bistable element is provided, where the resonant channel type phototransistor and a semiconductor laser are integrated. Furthermore, another optical bistable element is provided, where the resonant channel type phototransistor and an optical modulator are integrated.
ASAI HIROMITSU
AMANO CHIKARA
MATSUO SHINJI
