Title:
METHOD FOR FORMING SINGLE CRYSTAL THIN FILM
Document Type and Number:
Japanese Patent JP3222663
Kind Code:
B2
Abstract:
PURPOSE: To form single crystal thin films on a polycrystalline substrate by a plasma CVD method.
CONSTITUTION: A neutral Ne atom flow is mainly formed in the lower direction with an ECR ion-generating device 2. Reaction gases, such as a silane gas, charged from a reaction gas-charging pipe 13 are blown on a SiO2 substrate 11 by the action of a Ne atom flow, and the thin films of amorphous Si grow on the substrate 11 by a plasma CVD reaction. Simultaneously, a part of the highly oriented Ne atom flow is directly applied to the substrate 11, and a part of the other is bent with a reflection plate 12 and subsequently applied to the substrate 11. The reflection plate 12 is designed so that the direction of the Ne atom flow applied to the substrate 11 is perpendicular to the densest surface of the single crystal Si. Therefore, the growing amorphous Si thin films are successively converted into the single crystal Si thin films having uniform crystal axes so that the densest surfaces are disposed perpendicularly to the respective incident directions. The single crystalline thin films are thereby formed on the polycrystalline substrate.
Inventors:
Toshifumi Asakawa
Application Number:
JP28174893A
Publication Date:
October 29, 2001
Filing Date:
October 14, 1993
Export Citation:
Assignee:
Neural Systems Co., Ltd.
Mega Chips Co., Ltd.
Mega Chips Co., Ltd.
International Classes:
C30B25/02; C30B29/06; (IPC1-7): C30B25/02; C30B29/06
Domestic Patent References:
| JP63286579A | ||||
| JP360025A |
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)
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