PURPOSE: To reduce the formation of improper patterns due to the scattering of a liq. by providing a gas inlet, a gas passage part formed of an exterior wall and an interior wall having a smooth surface not to block the gas flow, a liq. outlet to discharge the liq. through inside and below the interior wall and a support rotatable with a sample fixed to below the interior wall.

CONSTITUTION: A semiconductor base plate 9 is fixed to a rotary support 10. The semiconductor base plate 9 is then coated with a liq. (e.g. developing solution) through a liq. discharge opening 8. After completion of this liq. coating, a gas flows from a gas inlet 12 through a gas flow passage part 13 defined between the inner surface of an exterior wall 6 and the outer surface of the interior wall 7. The support 10 is rotated to apply the liq. uniformly onto the semiconductor base plate 9. When the support is rotating, an excessive gas is carried out of the support 10 from the semiconductor 9 by a gaseous stream passing through the gas passage part 13. By this method, the scattering of the liq. can be reduced.