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Title:
SELECTIVE GROWTH OF ZnO NANOSTRUCTURE USING PATTERNED ATOMIC LAYER DEPOSITION (ALD) ZnO SEED LAYER
Document Type and Number:
Japanese Patent JP2006130647
Kind Code:
A
Abstract:

To provide a method for growing a ZnO nanostructure without using a metal catalyst.

A patterned zinc oxide nanostructure is grown without using a metal catalyst by forming a seed layer of a polycrystalline zinc oxide on the surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and the growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique (such as a metal organic deposition technique, a spray pyrolysis technique, an RF sputtering technique) or by the oxidation of a zinc thin film layer formed on the substrate.


Inventors:
CONLEY JOHN F JR
STECKER LISA H
Application Number:
JP2005299449A
Publication Date:
May 25, 2006
Filing Date:
October 13, 2005
Export Citation:
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Assignee:
SHARP KK
International Classes:
B82B3/00; B82B1/00; C01G9/02
Domestic Patent References:
JP2004291528A2004-10-21
JP2004006790A2004-01-08
JP2000512078A2000-09-12
Foreign References:
WO2004088005A12004-10-14
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio