SEMICONDUCTOR DEVICE HAVING AlGaN OXIDE FILM AND MANUFACTURING METHOD OF THE SAME

Title:

SEMICONDUCTOR DEVICE HAVING AlGaN OXIDE FILM AND MANUFACTURING METHOD OF THE SAME

Document Type and Number:

Japanese Patent JP2012060066

Kind Code:

A

Abstract:

To provide a technology that can easily form an insulation film on an AlGaN layer.

The manufacturing method of the semiconductor device having an AlGaN layer and an AlGaN oxide film formed on a surface of the AlGaN layer comprises an oxidation step of directing ultraviolet light on the AlGaN layer while applying voltage between the AlGaN layer and a cathode 44 so as to make the AlGaN layer become positive with a substrate 40 having the AlGaN layer and the cathode 44 being soaked in an alkali solution 48.

Inventors:

SUGIMOTO MASAHIRO
UESUGI TSUTOMU
HASHIZUME TAMOTSU

Application Number:

JP2010204479A

Publication Date:

March 22, 2012

Filing Date:

September 13, 2010

Export Citation:

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Assignee:

TOYOTA MOTOR CORP
TOYOTA CENTRAL RES & DEV
UNIV HOKKAIDO

International Classes:

H01L21/337; H01L21/316; H01L29/78; H01L29/808

Domestic Patent References:

JP2004311869A	2004-11-04
JPH04120298A	1992-04-21
JP2002329863A	2002-11-15

Other References:

JPN6014013170; Ｔ．　Ｒｏｔｔｅｒ，　ｅｔ　ａｌ．: '"Ｆｉｒｓｔ　ＡｌＧａＮ／ＧａＮ　ｍｅｔａｌ　ｏｘｉｄｅ　ｓｅｍｉｃｏｎｄｕｃｔｏｒ　ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅ　ｆｉｅｌｄ　ｅｆｆｅｃｔ　ｔｒａｎｓｉｓｔｏｒ　ｂａｓｅｄ　ｏｎ　ｐｈｏｔｏａｎｏ' Ｅｌｅｃｔｒｏｎｉｃｓ　ＬｅｔｔｅｒｓＶｏｌ．　３７，　Ｎｏ．　１１, 20010524, ｐ．　７１５-７１６
JPN6014013171; Ｎａｎａｋｏ　ＳＨＩＯＺＡＫＩ，　Ｔａｋｅｔｏｍｏ　ＳＡＴＯ，　Ｔａｍｏｔｓｕ　ＨＡＳＨＩＺＵＭＥ: '"Ｆｏｒｍａｔｉｏｎ　ｏｆ　Ｔｈｉｎ　Ｎａｔｉｖｅ　Ｏｘｉｄｅ　Ｌａｙｅｒ　ｏｎ　ｎ-ＧａＮ　ｂｙ　Ｅｌｅｃｔｒｏｃｈｅｍｉｃａｌ　Ｐｒｏｃｅｓｓ　ｉｎ　Ｍｉｘｅｄ　Ｓｏｌｕｔｉｏｎ　ｗｉｔｈ　Ｇｌｙ' Ｊａｐａｎｅｓｅ　Ｊｏｕｒｎａｌ　ｏｆ　Ａｐｐｌｉｅｄ　ＰｈｙｓｉｃｓＶｏｌ．　４６，　Ｎｏ．　４Ａ, 20070405, ｐ．　１４７１-１４７３

Attorney, Agent or Firm:

Kaiyu International Patent Office

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