PURPOSE: To enable an insulating sample not to be charged up even if ion implantation is actuated through a large ion current, by constituting the captioned device with an ion implantation sample holding device and a striped structure which is electrically connected to said sample holding device.

CONSTITUTION: A gadolinium, gallium and garnet GGG wafer of an insulating diametral switch is mounted to a sample holding part 2 which moves spirally like 4; in front of the sample, there is a striped structure 3 which is fixed to ion beam 1 and electrically connected, like 5, to the sample holding part 2 made of stainless steel. In this way, said sample can not be charged up even if Ar+ ion of 1×1015PCS/cm2 are implanted under the condition of ion current of 1.2mA with accelerating energy of 50eV, by means of the rectangular ion beam 1 of approximately 0.5cm×4cm.