SAMPLE INSPECTION AND MEASUREMENT METHOD AND SCANNING ELECTRON MICROSCOPE

Japanese Patent JP2014038864

A

To provide a method and device which allow the observation, inspection or measurement of a contact hole having a large aspect ratio to be realized.

As an embodiment to achieve the above objective, a method and device is proposed in which, when a sample is to be electrically charged, first a region having a first size is scanned by an electron beam whose secondary electron generation efficiency δ1 is larger than 1.0, secondly a region narrower than the first size is scanned by an electron beam whose secondary electron generation efficiency δ2 is smaller than the δ1 and then scanned by an electron beam to inspect or measure the sample.

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ESUMI MAKOTO
IWAMA SATORU
TSUNODA JUNICHI
SATO TAKAHIRO
IKEGAMI AKIRA

JP2013219732A

February 27, 2014

October 23, 2013

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HITACHI HIGH TECH CORP

H01J37/20; H01J37/05; H01J37/147; H01J37/28

JP2005203241A	2005-07-28
JP2005333161A	2005-12-02
JP2007180035A	2007-07-12
JP2006331825A	2006-12-07
JPH07262957A	1995-10-13
JP2007184283A	2007-07-19
JP2002118158A	2002-04-19
JP2006114426A	2006-04-27
JP2007053035A	2007-03-01
JP2005203241A	2005-07-28
JP2005333161A	2005-12-02
JP2007180035A	2007-07-12
JP2006331825A	2006-12-07

Manabu Inoue
Yuji Toda

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