To prepare a sample for TEM observation directly from a semiconductor wafer or a semiconductor chip.

This sample preparation method includes a process for thinning a specific position 2 on the semiconductor substrate 28 to a thickness, allowing the observation by a transmission electron microscope by use of a focused ion beam 3, and cutting out an observation area including the specific position 2, as the sample 1, and a process for preparing the sample 1 by the use of a manipulator system comprising an erect type optical microscope and a three- dimensional manipulator. When preparing the sample 1 using the manipulator system, the sample 1 is electrostatically attracted by the tip 8 of a micropipette composed of an insulator rod 7 installed to the tip 6 of the manipulator and is dropped onto an observation mesh 9 for the transmission electron microscope, and thereby, the sample 1 for the transmission electron microscope can be prepared directly from the semiconductor wafer or the semiconductor chip to control a semiconductor process.