Title:
CLEANING GAS AND ETCHING GAS
Document Type and Number:
Japanese Patent JP3183846
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To treat the exhaust gas in a relatively easy manner, to reduce the adverse effect on the global environment, and to remove unnecessary deposits an a relatively easy manner by using the gas containing OF2 gas which is easy to dissociate in cleaning and removing the deposited stuff generated in a thin film forming equipment.
SOLUTION: When a thin film is formed on a substrate by a thin film forming equipment, the gas containing OF2 gas is used for the cleaning gas in removing the transport deposited stuff on an inner wall of the equipment or jigs. The OF2 gas is diluted with the inert gas such as nitrogen, argon and helium for use, and when the temperature of the gas is preferably approximately 800°C if the material of the equipment is quartz, or ≤500°C when the metal such as ceramics and aluminum is used as other materials. The pressure is preferably ≤approximately 100 Torr. when the temperature exceeds approximately 500°C. Damages of the material of the equipment are extremely reduced, and the unnecessary deposited stuff is cleaned.
Inventors:
Isamu Mohri
Tetsuya Tamura
Tetsuya Tamura
Application Number:
JP13012097A
Publication Date:
July 09, 2001
Filing Date:
May 20, 1997
Export Citation:
Assignee:
Central Glass Co., Ltd.
International Classes:
C23C14/00; C23C16/44; C23F4/00; H01L21/203; H01L21/205; H01L21/31; (IPC1-7): C23C16/44; C23C14/00; H01L21/205
Domestic Patent References:
| JP1098019A | ||||
| JP9264824A |
Attorney, Agent or Firm:
Yoshiyuki Nishi
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