Title:
SAPPHIRE SUBSTRATE MANUFACTURING METHOD AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2016012664
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a sapphire substrate manufacturing method and a group III nitride semiconductor light emitting element manufacturing method, which can form a resist of a favorable shape to form a fine convexoconcave shape with high accuracy.SOLUTION: A sapphire substrate manufacturing method comprises a first resist pattern formation process, a second resist pattern formation process and a sapphire wafer etching process. The second resist pattern formation process includes: a first resist etching process (S210) of etching a resist R1 in a first period T1 by supplying a Clgas to a resist R1; a plasma irradiation process (S220) of irradiating a plasmatized Ar gas on the resist R1 in a second period T2; and a second resist etching process (S230) of etching the resist R1 in a third period T3 by supplying a Clgas to the resist R1 to form a resist R2.
More Like This:
| JP2006310653 | LED LAMP AND METHOD OF MOUNTING SUBSTRATE MOUNTED COMPONENT |
| WO/2018/151553 | SEMICONDUCTOR DEVICE |
| JPH08132673 | IMAGE APPARATUS |
Inventors:
TANIYAMA YOSHINORI
MATSUTANI TETSUYA
MATSUTANI TETSUYA
Application Number:
JP2014133658A
Publication Date:
January 21, 2016
Filing Date:
June 30, 2014
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L33/22; H01L33/32
Domestic Patent References:
| JP2008060286A | 2008-03-13 | |||
| JPH09213687A | 1997-08-15 | |||
| JP2014096394A | 2014-05-22 | |||
| JP2012204785A | 2012-10-22 | |||
| JP2010283095A | 2010-12-16 | |||
| JPH04306827A | 1992-10-29 | |||
| JP2008177528A | 2008-07-31 | |||
| JP2012169366A | 2012-09-06 | |||
| JP2012064811A | 2012-03-29 | |||
| JP2011134800A | 2011-07-07 | |||
| JP2000221698A | 2000-08-11 |
Foreign References:
| US5332653A | 1994-07-26 | |||
| US20090314743A1 | 2009-12-24 |
Other References:
LEE CHIA-EN ET AL.: "Enhancement of Flip-Chip Light-Emitting Diodes With Omni-Directional Reflector and Textured Micropil", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 19, no. 16, JPN6017025151, 1 July 2007 (2007-07-01), US, pages 1200 - 1202, XP011187388, ISSN: 0003595819, DOI: 10.1109/LPT.2007.901718
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Akinori Isshiki
Previous Patent: AGGREGATE SUBSTRATE DIVIDING JIG
Next Patent: ATTACHMENT/DETACHMENT STRUCTURE, ELECTRONIC DEVICE, AND ACCESSORY DEVICE
Next Patent: ATTACHMENT/DETACHMENT STRUCTURE, ELECTRONIC DEVICE, AND ACCESSORY DEVICE