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Title:
SCANNING ELECTRON MICROSCOPE AND ITS USING METHOD
Document Type and Number:
Japanese Patent JP2010097844
Kind Code:
A
Abstract:

To enable SEM observation having high solution without giving damages to a fragile sample.

A potential control part 14 is arranged in a plane which is located on the lower face side of a sample holder 12 and perpendicular to an optical axis of an electron beam irradiated to an observation sample 10. Then, the observation sample 10 is supported by a face opposed to the potential control part 14 of a sample support part 11 fixed to the sample holder 12, an acceleration voltage of the electron beam is set to have a value obtained by not allowing primary electrons to substantially transmit through the sample support part 11 and allowing secondary electrons generated in the sample support part 11 to reach an observation sample support face, and the observation is carried out under such a condition that the potential control part 14 is made to have a higher potential (V1:V1V0) than the potential (V0) of the sample holder 12. When the SEM observation is carried out under such a condition, secondary electrons emitted from the lower face of the sample support part 11 are pulled by the potential control part 14 in the optical axis direction of the electron beam, thus random emission of the secondary electrons is suppressed, and the high resolution of an obtained ISEC image can be achieved.


Inventors:
Ogura, Toshihiko
Application Number:
JP2008000268441
Publication Date:
April 30, 2010
Filing Date:
October 17, 2008
Export Citation:
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Assignee:
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE TECHNOLOGY
International Classes:
H01J37/28; H01J37/244
Domestic Patent References:
JPS6350442U
JPH10116580A
Attorney, Agent or Firm:
大野 聖二
森田 耕司
田中 玲子
片山 健一
山田 勇毅
鈴木 守