Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
Japanese Patent JP2020043365
Kind Code:
A
Abstract:
To provide a silicon carbide substrate and a semiconductor device, capable of reducing reverse leakage current.SOLUTION: A main surface (M80) of a silicon carbide substrate (80) is inclined by an off-angle in an off direction from a {0001} plane of hexagonal crystal. The main surface (M80) has characteristics so that in a light emitting region of photo luminescence light (LL) of the main surface (M80) caused by excitation light (LE) having energy higher than a band gap of a hexagonal silicon carbide and having more than 650 nm of wavelength, 1×10or less per 1 cmis the number of the light emitting region having size of 15 μm or less in a direction perpendicular to the off direction and the light emitting region having size of a value or less obtained by dividing length of the excitation light (LL) penetrated into the hexagonal silicon carbide by a tangent of the off-angle in a direction parallel to the off direction. Thereby, reverse leakage current can be reduced.SELECTED DRAWING: Figure 1
Inventors:
HARADA MAKOTO
HONKE TSUBASA
HONKE TSUBASA
Application Number:
JP2019219770A
Publication Date:
March 19, 2020
Filing Date:
December 04, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L29/872; C30B29/36; H01L21/329; H01L21/336; H01L29/06; H01L29/12; H01L29/78
Domestic Patent References:
| JP2010135789A | 2010-06-17 | |||
| JP2010153464A | 2010-07-08 | |||
| JP2008235767A | 2008-10-02 |
Attorney, Agent or Firm:
Fukami patent office