Title:
SCHOTTKY PHOTODIODE
Document Type and Number:
Japanese Patent JPH03180076
Kind Code:
A
Abstract:
PURPOSE:To improve the high-speed response and conversion efficiency of a Schottky diode by providing electrodes on an erected surface of a semiconductor layer having a projecting shape. CONSTITUTION:A semi-insulative GaAs substrate 1 being used as a substrate, an N<-> type GaAs layer 2 is provided as a semiconductor layer formed on this semi-insulative GaAs substrate 1, and an ohmic electrode 4 in ohmic connection with this N<-> type GaAs layer 2 and a Schottky electrode 5 forming a Schottky junction with the N<-> type GaAs layer 2 are provided. The N<-> type GaAs layer 2 is formed projecting on the surface of the semi-insulative GaAs substrate 1, i.e., in the shape of a stripe, and the ohmic electrode 4 and the Schottky electrode 5 are formed on the erected surface of the stripe, i.e., the lateral side thereof. Since a Schottky photodiode can receive an incident light not through the Schottky electrode 5, according to this constitution, a conversion efficiency can be increased. Since the Schottky electrode 5 can be made thick and also the electrostatic capacity of an element itself is small, in addition, a high-speed response is improved.
Inventors:
IIO SHINJI
Application Number:
JP31979789A
Publication Date:
August 06, 1991
Filing Date:
December 08, 1989
Export Citation:
Assignee:
HIKARI KEISOKU GIJUTSU KAIHATS
International Classes:
H01L31/108; (IPC1-7): H01L31/108
Attorney, Agent or Firm:
Naotaka Ide
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