PURPOSE: To improve the yield and working accuracy of a compound semiconductor wafer by applying a local temperature change linearly along the cleaving direction of the wafer and simultaneously applying a pressing thereto to cleave the linear part, thereby scribing it.
CONSTITUTION: An ironlike tool 2 is contacted with a compound semiconductor wafer 1 along the cleaving direction of the wafer 1, locally heated at 100°C or higher, and a pressing of several tens g/cm is further applied to divide the wafer 1. After a heating temperature is set to a set value, it is constantly controlled. When the wafer 1 is then divided, the wafer. 1 is placed on a working base 4, the dividing surface is contacted with a groove 5, the tool 2 is pressed from above to easily divide it. Thus, there is no danger of adhering or intaking the fine powder of the wafer to a worker, and a scribing work can be semiautomatically achieved.
OHASHI SEISHIRO
SAWAHATA SUSUMU
MOCHIZUKI OSAMU
HIROSE TETSUYA
