To prevent the drop of degree of vacuum caused by the occurrence of oxygen, and also, prevent the transformation caused by the difference of thermal expansion coefficient, by making the silicon film made by film formation technique a space regulating member.
A sealed container 14 is made on the center of a substrate 10. The sealed container 14 is constituted by stacking silicon films 26a, 28a, 30a, and 32 as space stipulating members on the substrate 10 by film formation technique. In this constitution, the silicon films 26a, 28a, and 30a constitute a side face part 13, and the silicon film 32 constitutes a topside part. Then, these side face part 13 and topside part 15 stipulate a space part. According to this constitution, since the silicon films 26a, 28a, 30a, and 32 are made as the side face part 13 and the topside part 15 of the sealed container 14 made by film formation technique, anode junction becomes needless. Accordingly, this can prevent the drop of degree of vacuum caused by the generation of oxygen, and also can prevent the transformation of the sealed container 14 caused by the difference of thermal expansion coefficient.
TSUCHIYA TOMOYOSHI
SAKATA JIRO
KAGEYAMA YASUYUKI
| JPH06148012A | 1994-05-27 | |||
| JPH07318583A | 1995-12-08 | |||
| JPH0735768A | 1995-02-07 |